PART |
Description |
Maker |
MWS5114 MWS5114D1 MWS5114D2 MWS5114D3 MWS5114D3X M |
1024-Word x 4-Bit LSI Static RAM 1K X 4 STANDARD SRAM, 250 ns, PDIP18 6 OUTLET PWR STRIP FOR 5 1K X 4 STANDARD SRAM, 300 ns, CDIP18 From old datasheet system
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Intersil, Corp. INTERSIL[Intersil Corporation]
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CDP1823 CDP1823CD CDP1823CDX CDP1823CE CDP1823D CD |
128-Word x 8-Bit LSI Static RAM From old datasheet system
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HARRIS SEMICONDUCTOR INTERSIL[Intersil Corporation]
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CDP1822C CDP1822C3 FN2981 |
From old datasheet system High-Reliability CMOS 256-Word x 4-Bit LSI Static RAM
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INTERSIL[Intersil Corporation]
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MSM521218 |
65,536-Word ?18-Bit CMOS STATIC RAM(64k瀛??8浣????AM) 65,536-Word x 18-Bit CMOS STATIC RAM From old datasheet system 65,536-Word ×18-Bit CMOS STATIC RAM(64k字8位静态RAM) 65,536字18位的CMOS静态RAM4K的字× 18位静态RAM)的
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OKI SEMICONDUCTOR CO., LTD.
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M5M5V208FP-10LL-W M5M5V208FP-10L-W M5M5V208FP-12LL |
From old datasheet system Coaxial Cable; Coaxial RG/U Type:8; Impedance:50ohm; Conductor Size AWG:16; No. Strands x Strand Size:19 x 29; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes RoHS Compliant: Yes 2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM 2097152位(262144 - Word8位)的CMOS静态RAM 2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM 2097152位(262144 - Word位)的CMOS静RAM 2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM 2097152位(262144 - Word位)的CMOS静态RAM
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http:// MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation Mitsubishi Electric, Corp.
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TC55257DFI-70L TC55257DFI-85L TC55257DFTI-70L TC55 |
32,768 WORD x 8 BIT STATIC RAM 32,768字8位静态RAM 32K Word x 8 Static RAM(32Kx 8 静RAM) 32K的字× 8静态RAM2K的字× 8静态RAM)的
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Toshiba, Corp. Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
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HM51258P HM51258P-10 HM51258P-12 HM51258P-15 HM512 |
262,144-word x 1-bit Static Column CMOS Dynamic RAM 262144 word x 1 Bit Static Column CMOS DRAM
|
Hitachi Semiconductor
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CXK5864BM-10L CXK5864B CXK5864BP-10L CXK5864BP-12L |
Series 400B sealed SMT sub-miniature rocker switch with variety of switching functions 8,192-WORD X 8-BIT HIGH SPEED CMOS STATIC RAM 8192-WORD X 8-BIT HIGH SPEED CMOS STATIC RAM 8,192字8位高速CMOS静态RAM
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http:// SONY[Sony Corporation]
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TC55V16648BBFT-10 TC55V16648BBFT-12 TC55V16648BBFT |
65,536-WORD BY 16-BIT CMOS STATIC RAM 65,536字由16位的CMOS静态RAM MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16 BIT CMOS STATIC RAM
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Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
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M6MGT331S8AKT M6MGB331S8AKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
|
Renesas Electronics Corporation
|
TC55257BFL-10L TC55257BFL-85 TC55257BPL-10 TC55257 |
85ns; V(dd/in): -0.3 to 7.0V; silicon gate CMOS: 32,768 word x 8-bit staic RAM (TC55257xxx) SILICON GATE CMOS 32768 WORD X 8 BIT STATIC RAM SILICON GATE CMOS 32,768 WORD X 8 BIT STATIC RAM 硅栅CMOS 32768字8位静态RAM
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TOSHIBA[Toshiba Semiconductor] Toshiba Corporation Toshiba, Corp.
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M5M5V208FP-10L M5M5V208FP-10LL M5M5V208FP-12L M5M5 |
From old datasheet system 2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM 2097152位(262144 - Word8位)的CMOS静态RAM 2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM 2097152位(262144 - Word位)的CMOS静态RAM 2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM 2097152位(262144 - Word位)的CMOS静RAM
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http:// MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation Mitsubishi Electric, Corp.
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